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EEE-210 Physical Electronics
The FINAL Exam 25.06.2008, 120 min, 100 points, 5 questions, 4 pages.
All calculations should be done in detail, step by step. Calculations are valid until the first
error. Answers should be filled in the blanks, otherwise they are not valid. No partial credits

SURNAME . . . . . . . . . . . NAME . . . . . .

1.(15) In an n-type silicon, the donor concentration corresponds to 1 atom per 107 silicon atoms, the electron effective mass is 0.33 m0. Calculate: (a) the concentration of donor atoms,
(b) The Fermi level with respect to the conduction band edge at room temperature, (c) if the
Fermi level coincide with Ec, what should be the concentration of donors?

2.(25) p-type silicon MOS capacitor doped 1023 m-3 , has an oxide thickness of 0.1 m. If the gate potential is 5 V,
find: (a) oxide capacitance; (b) derive the quadratic equation for the surface potential s and calculate s;
(c) the voltage across oxide V0; (d) induced charge Qs; (e) depletion layer width Xd.

3.(20)Derive an expression of the anode current IA as a function of the gate current by using the two-transistor
analog in an SCR.

4.(20) In a p+n junction diode, the width of the n region Wn is much smaller than Lp. Using Ip(x = Wn) = qASpn
as one of the boundary conditions, derive the carrier and current distributions. Sketch the shape of minority carriers in the n side for S = 0 and S = .

5.(20) The potential is given by –1.5*1013 x2 volts. The charge in semiconductor is due to a uniform distribution of singly charged carriers. Find the concentration of carriers and their polarity (electrons or holes). The dielectric constant is 12.

N = cm-3 ; Polarity = ;