1. 2126.
    0
    An
    optical
    lithography
    equipment
    can
    only
    pattern
    resist
    linewidths
    down
    to
    0.5
    μm
    at
    best.
    Assume
    it
    is
    required
    to
    have
    a
    poly-­‐Si
    linewidth
    of
    0.2
    μm
    in
    a
    device
    design.
    For
    resists
    with
    vertical
    sidewalls,
    explain
    the
    process
    steps
    (with
    illustration
    and
    explanation)
    which
    can
    give
    0.2
    μm
    poly-­‐Si
    linewidth
    with
    vertical
    sidewalls
    as
    shown
    below.
    ···
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